In the construction of this diode gold, platinum, tungsten and some silicides are used with the semiconductor material that is N doped. The selection of the combination of the metal and semiconductor decides the forward voltage of the diode. It has no P-N junction. The anode side is composed of metal while the cathode side is made of semiconductor material. Although Silicon can be used for low frequencies operation. Schottky diode is related directly with temperature dropping. The intrinsic layer of the diode is the one that provides the change in properties which compared to normal PN junction diode. Construction: A schottky diode is shown in figure. Different materials used in construction results in different characteristics of resulting Schottky diode. It is a metal semiconductor junction diode without depletion layer. A Schottky diode, also known as a hot carrier diode, is a semiconductor diode which has a low forward voltage drop and a very fast switching action. Although it was ine of the first types of diode ever made, the Schottky diode is widely sued because it is able to provide a very low forward voltage drop. metal side performs as an anode and n-type semiconductor works as a cathode. The diode may have different set of characteristics depending on which material is used, en… The schottky diode is named after German physicist Walter H. Schottky. The metal side acts as the anode, and n-type semiconductor acts as the cathode of the diode; meaning conventional currentcan flo… The Schottky diode is small different from PN junction diode. B)Etching and polishing of Silicon wafer. Schottky Diode: P-N Junction Diode: Junction is formed between N type semiconductor to Metal plate. Construction of PIN diode: A PIN diode is made up of three semiconductor materials. 1. 2.2.3 fell into disuse by the late 20th century, a Metal/semiconductor junction is still used in Schottky diodes manufactured using silicon planar technolo… In N type semiconductor, decrease and increase of temperature doping concentration happens. Working of Zener diode. Construction of Schottky Diode: As pointed earlier that the construction of the Schottky Diode is different from that of the normal PN junction diode. Although germanium diodes using the cats whisker or point contact principle illustrated in Fig. Semi-transparant 4H-SiC Schottky Diode: a schematic of the diode cross section, detailing the layers and structures, with their thicknesses and annealing temperatures. One side of the junction a metal like silicon, gold, platinum is used and other side of N-type doped semiconductor is used. On one side of junction a metal like gold, silicon, platinum is used and other side N type doped semiconductor is used. The V-I characteristics of Schottky diode are very much similar to the PN junction diode. The Schottky diode employs the metal-semiconductor junction instead of the PN junction which is employed in normal PN diodes. This depletion layer creates a barrier between these n and p materials. Both the point-contact and Schottky diodes consist of a die of semiconductor material on which an epitaxial layer is deposited. Schottky diodes, also called Hot Carrier Diodes or Schottky Barrier Diodes use a metal/semiconductor junction instead of a P semiconductor/N semiconductor junction, a basic principle that dates back to the earliest ‘Cats Whisker’ diodes at the end of the 19th century. Your email address will not be published. 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